Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator
نویسندگان
چکیده
We report on the super enhancement of the 1.54 μm Er emission in erbium doped silicon-on-insulator when codoped with oxygen at a ratio of 1:1. This is attributed to a more favourable crystal field splitting in the substitutional tetrahedral site favoured for the singly coordinated case. The results on these carefully matched implant profiles show that optical response is highly determined by the amount and ratio of erbium and oxygen present in the sample and ratios of O:Er greater than unity are severely detrimental to the Er emission. The most efficient luminescence is forty times higher than in silicon-on-insulator implanted with Er only. This super enhancement now offers a realistic route not only for optical communication applications but also for the implementation of silicon photonic integrated circuits for sensing, biomedical instrumentation and quantum communication.
منابع مشابه
Influence of exposure to 980 nm laser radiation on the luminescence of Si: Er/O light-emitting diodes
Erbium ͑Er͒ codoping with oxygen ͑O͒ in Si is a well-known method for producing electroluminescent material radiating at 1.54 m through a 4f shell transition of Er 3+ ions. In this work the influence of exposure to 980 nm radiation on the electroluminescence ͑EL͒ of reverse biased Si:Er/O light-emitting diodes ͑LEDs͒, which give a strong room temperature 1.54 m intensity, is presented and discussed. ...
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